Published January 21, 2020
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Halometallate ligand-capped semiconductor nanocrystals
Creators
- 1. University of Chicago
Contributors
Patent applicant:
Description
Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.
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US10541134.pdf
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Additional details
Identifiers
- Patent number
- US 10541134 B2
- Patent application number
- US 201615772258 A
- Other
- oai:uchicago.tind.io:6975
Dates
- Patent filed
-
2016-11-02