Published February 18, 1997 | Version v1
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Process of preparing tritiated porous silicon

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Description

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

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Additional details

Identifiers

Patent application number
US 67132596 A
Patent number
US 5604162 A
Other
oai:uchicago.tind.io:9361

Dates

Patent filed
1996-06-27

UChicago Information

Division(s)
Physical Sciences Division
Department(s)
Physics