Published December 15, 1998
| Version v1
Patent
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Diamond film growth argon-carbon plasmas
Creators
- 1. University of Chicago
- 2. Argonne National Laboratory
Description
A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.
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US5849079.pdf
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Additional details
Identifiers
- Patent application number
- US 41715495 A
- Patent number
- US 5849079 A
- Other
- oai:uchicago.tind.io:8757
Dates
- Patent filed
-
1995-04-04