Published January 15, 2021 | Version v1
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Metallic line defect in wide-bandgap transparent perovskite BaSnO3

  • 1. University of Minnesota
  • 2. Brookhaven National Laboratory
  • 3. University of Chicago

Description

A line defect with metallic characteristics has been found in optically transparent BaSnO3perovskite thin films. The distinct atomic structure of the defect core, composed of Sn and O atoms, was visualized by atomic-resolution scanning transmission electron microscopy (STEM). When doped with La, dopants that replace Ba atoms preferentially segregate to specific crystallographic sites adjacent to the line defect. The electronic structure of the line defect probed in STEM with electron energy-loss spectroscopy was supported by ab initio theory, which indicates the presence of Fermi level-crossing electronic bands that originate from defect core atoms. These metallic line defects also act as electron sinks attracting additional negative charges in these wide-bandgap BaSnO3 films.

Data availability

All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors.

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Additional details

Identifiers

DOI
10.1126/sciadv.abd4449
Other
oai:uchicago.tind.io:10949

Funding

Semiconductor Research Corporation
SMART, one of seven centers of nCORE
Air Force Office of Scientific Research
FA9550-19-1-0245
National Science Foundation
DMR-1420013
National Science Foundation
DMR-1741801
National Science Foundation
DMR-2011401

UChicago Information

Division(s)
Pritzker School of Molecular Engineering