Published January 15, 2021
| Version v1
Journal article
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Metallic line defect in wide-bandgap transparent perovskite BaSnO3
Creators
- 1. University of Minnesota
- 2. Brookhaven National Laboratory
- 3. University of Chicago
Description
A line defect with metallic characteristics has been found in optically transparent BaSnO3perovskite thin films. The distinct atomic structure of the defect core, composed of Sn and O atoms, was visualized by atomic-resolution scanning transmission electron microscopy (STEM). When doped with La, dopants that replace Ba atoms preferentially segregate to specific crystallographic sites adjacent to the line defect. The electronic structure of the line defect probed in STEM with electron energy-loss spectroscopy was supported by ab initio theory, which indicates the presence of Fermi level-crossing electronic bands that originate from defect core atoms. These metallic line defects also act as electron sinks attracting additional negative charges in these wide-bandgap BaSnO3 films.
Data availability
All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors.Files
sciadv.abd4449.pdf
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(5.2 MB)
| Name | Size | Download all |
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Supplementary materials md5:f356d5a3947ae408112f8a2ded32b3da |
2.3 MB | Preview Download |
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Article md5:098a803528ff35597a7e518165333d35 |
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Additional details
Identifiers
- DOI
- 10.1126/sciadv.abd4449
- Other
- oai:uchicago.tind.io:10949
Funding
- Semiconductor Research Corporation
- SMART, one of seven centers of nCORE
- Air Force Office of Scientific Research
- FA9550-19-1-0245
- National Science Foundation
- DMR-1420013
- National Science Foundation
- DMR-1741801
- National Science Foundation
- DMR-2011401