Published July 15, 2003
| Version v1
Patent
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Tailoring nanocrystalline diamond film properties
Creators
- 1. University of Chicago
- 2. Argonne National Laboratory
Description
A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.
Files
US6592839.pdf
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Additional details
Identifiers
- Patent application number
- US 25591999 A
- Patent number
- US 6592839 B2
- Other
- oai:uchicago.tind.io:8768
Dates
- Patent filed
-
1999-02-23