Published July 15, 2003 | Version v1
Patent Open

Tailoring nanocrystalline diamond film properties

  • 1. University of Chicago
  • 2. Argonne National Laboratory

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Description

A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.

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Additional details

Identifiers

Patent application number
US 25591999 A
Patent number
US 6592839 B2
Other
oai:uchicago.tind.io:8768

Dates

Patent filed
1999-02-23

UChicago Information

Division(s)
Physical Sciences Division
Department(s)
Physics