Published May 11, 1999 | Version v1
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Method of improving field emission characteristics of diamond thin films

  • 1. Argonne National Laboratory
  • 2. University of Chicago

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Description

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

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Additional details

Identifiers

Patent application number
US 68442696 A
Patent number
US 5902640 A
Other
oai:uchicago.tind.io:9006

Dates

Patent filed
1996-07-19

UChicago Information

Division(s)
Physical Sciences Division
Department(s)
Physics