Published November 22, 2019 | Version v1
Journal article Open

Electrically driven optical interferometry with spins in silicon carbide

Description

Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The groundstate spin's weak coupling to its environment not only bestows excellent coherence properties but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent quantum interference in the optical transition of single, basally oriented divacancies in commercially available 4H silicon carbide. By applying microwave frequency electric fields, we coherently drive the divacancy's excited-state orbitals and induce Landau-Zener-Stückelberg interference fringes in the resonant optical absorption spectrum. In addition, we find remarkably coherent optical and spin subsystems enabled by the basal divacancy's symmetry. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount.

Data availability

All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors.

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Additional details

Identifiers

DOI
10.1126/sciadv.aay0527
Other
oai:uchicago.tind.io:11010

Funding

National Science Foundation
EFRI EFMA-1641099
Office of Naval Research
N00014-17-1-3026
Air Force Office of Scientific Research
FA9550-14-1-0231
Air Force Office of Scientific Research
FA9550-15-1-0029
Defense Sciences Office, DARPA
D18AC00015KK1932
Knut och Alice Wallenbergs Stiftelse
2018.0071
JSPS
17H01056
JSPS
18H03770
NKFIH
2017-1.2.1-NKP2017-00001
NVKP
16-1-2016-0043

UChicago Information

Division(s)
Physical Sciences Division, Pritzker School of Molecular Engineering
Department(s)
Physics