Published April 15, 2003 | Version v1
Patent Open

Method to produce ultra-low friction carbon films

Description

A method and article of manufacture of amorphous diamond-like carbon. The method involves providing a substrate in a chamber, providing a mixture of a carbon containing gas and hydrogen gas with the mixture adjusted such that the atomic molar ratio of carbon to hydrogen is less than 0.3, including all carbon atoms and all hydrogen atoms in the mixture. A plasma is formed of the mixture and the amorphous diamond-like carbon film is deposited on the substrate. To achieve optimum bonding an intervening bonding layer, such as Si or SiO2, can be formed from SiH4 with or without oxidation of the layer formed.

Files

US6548173.pdf

Files (1.1 MB)

Name Size Download all
md5:98105cdcf5170afc08e734cc3f83852a
1.1 MB Preview Download

Additional details

Identifiers

Patent application number
US 80863201 A
Patent number
US 6548173 B2
Other
oai:uchicago.tind.io:8690

Dates

Patent filed
2001-03-14

UChicago Information

Division(s)
Physical Sciences Division
Department(s)
Physics