Published August 25, 2020
| Version v1
Patent
Open
Method of forming topcoat for patterning
Creators
- 1. Massachusetts Institute of Technology
- 2. University of Chicago
Contributors
Patent applicants:
Description
Disclosed is a method for the fabrication of polymeric topcoat via initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with directed self-assembly (DSA) of block copolymers to generate high resolution patterns. A topcoat deposited by iCVD or piCVD allows for conformal, ultra-thin, uniform, pinhole-free coatings. iCVD or piCVD topcoat enables the use of a diversity of block copolymer (BCP) materials for DSA and facilitates the direct and seamless integration of the topcoats for a pattern transfer process.
Files
US10755942.pdf
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Additional details
Identifiers
- Patent number
- US 10755942 B2
- Patent application number
- US 201715685609 A
- Other
- oai:uchicago.tind.io:7373
Dates
- Patent filed
-
2017-08-24